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FEI/Philips Sirion Field Emission SEM


The FEI Sirion Scanning Electron Microscope (SEM) is a high-resolution instrument with an electron beam voltage range from 200V – 30kV.  The field-emission electron source (FEG) and Hexalens electron column are capable of imaging resolution down to 1.5nm at high beam voltages and 2.5nm at 1kV.  The FEG, the semi-immersion objective lens, and the in-lens secondary electron detector together provide high-resolution imaging from 200eV to 30keV. The immersion-lens mode and the in-lens SE detector provide extremely high SE collection efficiency giving excellent high-resolution imaging. As well as a normal secondary electron (SE) detector this SEM has a Back Scattered Electron (BSE) Detector, Energy Dispersive Spectrometer for chemical analysis using X-rays (EDS), and an internal TV camera (CCD). The scan generator also will scan up to 4kx3k images so that large area images can be acquired with excellent resolution. The EDS system is also capable of acquireing X-ray maps and line scans.

 

 

Equiaxed alpha particles, surrounded by solute atmospheres, in a matrix of beta, in Ti-5Al-2Sn-2Zr-4Mo-4Cr. The microstructure was formed by rapidly heating the alloy, in alpha beta processed condition, to a temperature above the beta transus, and quickly cooling back to room temperature.

Alpha laths in a matrix of martensite, in Ti-6Al-2Sn-2Zr-2Mo-2Cr. The microstructure was formed by quenching from an elevated temperature, below the beta transus.